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| NTGD4169F Power MOSFET and Schottky Diode Features 30 V, 2.9 A, N-Channel with Schottky Barrier Diode, TSOP-6 * * * * * * Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb-Free Device http://onsemi.com N-CHANNEL MOSFET V(BR)DSS 30 V RDS(on) Max 90 mW @ 4.5 V 125 mW @ 2.5 V ID Max 2.6 A 2.2 A SCHOTTKY DIODE VR Max 30 V VF Max 0.53 V IF Max 1.0 A Applications * DC-DC Converters * Portable Devices like PDA's, Cellular Phones, and Hard Drives MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage N-Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t5 s Steady State t5 s tp = 10 ms IDM TJ, TSTG IS TL TA = 25C TA = 85C TA = 25C TA = 25C PD Symbol VDSS VGS ID Value 30 12 2.6 1.9 2.9 0.9 1.1 8.6 -25 to 150 0.9 260 A C A C W Unit V V A D A G S N-Channel MOSFET K Schottky Diode Pulsed Drain Current Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) MARKING DIAGRAM 1 TSOP-6 CASE 318G STYLE 15 TD MG G SCHOTTKY MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Symbol VRRM VR IF Symbol RqJA RqJA Value 30 30 1 Unit V V A 1 TD = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN CONNECTION A 1 2 3 (Top View) 6 5 4 K N/C D THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 5 s (Note 1) Value 140 110 Unit C/W C/W S G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. (c) Semiconductor Components Industries, LLC, 2008 May, 2008 - Rev. 1 1 Publication Order Number: NTGD4169F/D NTGD4169F MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-TO-SOURCE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 0.9 A VGS = 0 V IS = 0.9 A TJ = 25C 0.7 8.0 5.0 3.0 3.0 nC ns 1.2 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 1.0 A, RG = 6.0 W 7.0 4.0 14 2.0 ns VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 15 V, ID = 2.0 A VGS = 4.5 V VGS = 2.5 V CHARGES, CAPACITANCES AND GATE RESISTANCE VGS = 0 V, f = 1.0 MHz, VDS = 15 V 295 48 27 3.7 0.6 0.9 0.8 5.5 nC pF ID = 2.6 A ID = 2.2 A VGS = VDS, ID = 250 mA 0.5 0.9 -3.4 52 67 2.6 90 125 1.5 V mV/C mW S V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 24 V TJ = 25C TJ = 85C VGS = 0 V, ID = 250 mA 30 21.4 1.0 10 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = 12 V VDS = 15 V, ID = 2.6 A 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTGD4169F SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF IR Test Conditions IF = 0.5 A IF = 1.0 A VR = 30 V VR = 20 V Symbol VF IR Test Conditions IF = 0.5 A IF = 1.0 A VR = 30 V VR = 20 V Symbol VF IR Test Conditions IF = 0.5 A IF = 1.0 A VR = 30 V VR = 20 V Symbol C Test Conditions VR = 10 V, f = 1.0 MHz Min Min Min Min Typ 0.41 0.46 7.3 2.5 Max 0.45 0.53 20 8.0 mA Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Typ 0.35 0.41 0.4 0.17 mA Max Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Typ 0.31 0.39 4.4 1.6 mA Max Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Capacitance Typ 28 Max Unit pF ORDERING INFORMATION Device NTGD4169FT1G Package TSOP-6 (Pb-Free) Shipping 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NTGD4169F TYPICAL CHARACTERISTICS N-CHANNEL 9.0 8.0 ID, DRAIN CURRENT (A) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.5 V 2.5 V 9.0 8.0 ID, DRAIN CURRENT (A) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.75 1 125C -55C 25C VGS = 4.5 V 3.5 V TJ = 25C 2.0 V VDS = 5 V 1.25 1.5 1.75 2 2.25 2.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.20 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID = 2.6 A TJ = 25C 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0 Figure 2. Transfer Characteristics TJ = 25C VGS = 2.5 V VGS = 4.5 V 5.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Region vs. Gate-To-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 ID = 2.6 A VGS = 4.5 V C, CAPACITANCE (pF) 400 350 300 250 200 150 100 50 0 Figure 4. On-Resistance vs. Drain Current and Temperature TJ = 25C VGS = 0 V f = 1 MHz CISS COSS CRSS 0 5 10 15 20 25 30 DRAIN-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 4 NTGD4169F VGS, GATE-TO-SOURCE VOLTAGE (V) 5 4 VDS 3 2 1 0 0 1 2 3 4 QG, TOTAL GATE CHARGE (nC) QGS QGD VGS QT 16 14 12 10 8 6 ID = 2.0 A TJ = 25C VDS = 15 V 4 2 0 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 1.0 TJ = 150C TJ = 25C 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 7. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 1.2 1.1 1.0 POWER (W) VGS(th) (V) 0.9 0.8 0.7 0.6 0.5 0.4 -50 -25 0 25 50 75 100 125 150 0 0.001 ID = 250 mA 30 40 Figure 8. Diode Forward Voltage versus Current 20 10 0.01 0.1 1 10 100 1000 TJ, JUNCTION TEMPERATURE (C) SINGLE PULSE TIME (s) Figure 9. Threshold Voltage 100 VGS = -10 V Single Pulse TA = 25C Figure 10. Single Pulse Maximum Power Dissipation ID, DRAIN CURRENT (A) 10 100 ms 1 1 ms 10 ms 0.1 RDS(on) Limit Thermal Limit Package Limit 1 10 dc 100 0.01 0.1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 NTGD4169F 1 Duty Cycle = 0.5 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE NORMALIZED 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 0.1 0.01 0.0001 Figure 12. FET Thermal Response TYPICAL CHARACTERISTICS SCHOTTKY IF, INSTANTANEOUS FORWARD CURRENT (A) 10 100E-3 IR, REVERSE CURRENT (A) 10E-3 1E-3 TJ = 125C TJ = 85C 1 TJ = 125C 25C 85C -55C 100E-6 10E-6 TJ = 25C 1E-6 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 100E-9 0 10 20 30 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 13. Typical Forward Voltage Figure 14. Typical Reverse Current http://onsemi.com 6 NTGD4169F PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE T D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 HE 6 1 5 2 4 3 E b e c L q 0.05 (0.002) A1 A STYLE 15: PIN 1. ANODE 2. SOURCE 3. GATE 4. DRAIN 5. N/C 6. CATHODE SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NTGD4169F/D |
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